Defect Engineering in Gallium Nitride Semiconductors for Improving Carrier Mobility and High-Power Electronic Device Reliability

This project studies how deliberately introducing or removing defects affects carrier mobility and long‑term reliability in Gallium Nitride (GaN) devices that operate at high voltage and high temperature. GaN power electronics are increasingly exposed to strong electric fields and fast switching speeds. In these conditions, defects trap carriers, which reduces transport stability and shortens device life. The work evaluates several common microstructural defects, such as: – nitrogen and gallium vacancies – carbon‑ and oxygen‑related impurities – threading dislocations – interface traps It examines how these defects cause Coulomb scattering, increase on‑resistance over time, raise leakage currents, and shift threshold voltage. From this analysis a unified model linking defects, transport behavior,

and reliability is built. The methodology also offers guidance for: – simulating epitaxial growth‑condition control – managing compensation levels – reducing dislocation density – applying post‑growth thermal treatments Ultimately, the research supports the creation of predictive TCAD models that weigh defect‑reduction strategies against high‑frequency switching performance. This provides a clear path to optimize GaN heterostructures for durable, high‑power converter applications.

Message: Hi FE, I need help with “Defect Engineering in Gallium Nitride Semiconductors for Improving Carrier Mobility and High-Power Electronic Device Reliability” in “Electrical Engineering”