Carbon Nanotube Field-Effect Transistors for Next-Generation Multi-Valued Logic and Mixed-Signal Applications: A Comprehensive Review

The power wall and diminishing returns on scaling have placed the relentless advance of traditional silicon-based Complementary Metal-Oxide-Semiconductor (CMOS) technology) in a position to define physical limits. This makes the search for 'beyond-CMOS' options to push the boundaries of technology imperative. Carbon Nanotube Field-Effect Transistors (CNFETs) offer a compelling value proposition due to their enhanced carrier mobility, near-ballistic transport, and superior electrostatic characteristics. This research examines some of the latest developments in CNFET-based circuit design, focusing on two of the most promising areas of application, Multi-Valued Logic (MVL) and high-performance analog systems. It synthesizes literature that addresses the device-level challenges of the fundamental processes underlying variability and charts the transition

from simple ternary logic gates to sophisticated multi-functional arithmetic systems. Additionally, it assesses the performance of CNFETs in sequential, memory, and analog circuits, showing improvements by several orders of magnitude over their CMOS equivalents. The work addresses the gap between claims for performance based on simulations and the fact that experimental demonstrations are critically lacking. Variability-aware design and robust experimental work to realize the full promise of the technology are pointed to as critical needs in the outline of future work.

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