Wide Bandgap Semiconductor Technologies for Next-Generation Power Electronics: Materials, Devices, and Application Perspectives

Silicon power semiconductors hit serious limits when they have to handle high voltage, high frequency, or high temperature. This review looks at switching to wide‑bandgap (WBG) materials—silicon carbide (SiC) and gallium nitride (GaN)—to get past those limits in next‑generation power electronics. It examines the most important material properties: band‑gap energy, critical electric field, electron mobility, and thermal conductivity. It also compares the structure and operation of SiC MOSFETs with GaN HEMTs. The findings show that SiC devices excel in high‑voltage, high‑power applications, achieving converter efficiencies of 98–99 %. GaN devices are best for high‑frequency, high‑power‑density systems that run above 500 kHz. Because the abstract is short, the exact experimental parameters

of the converter topologies were not covered, but the material comparison provides a solid base for modeling and simulation. The review also offers guidance on setting up comparative simulations to evaluate switching losses and thermal performance under different load conditions.

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