Steep-Slope MoS2 and WSe2 Field-Effect Transistors Enabled by Ag/SiO2 Atomic Threshold Switches for Static-Power-Suppressed Complementary Inverters.

The project models and simulates steep‑slope transition‑metal dichalcogenide (TMD) field‑effect transistors (FETs) that are combined with volatile threshold switches to cut static power loss in complementary inverters. The n‑type channel uses molybdenum disulfide (MoS₂) and the p‑type channel uses tungsten diselenide (WSe₂). Both devices are paired with silver/silicon dioxide (Ag/SiO₂) atomic threshold switches (ATS). Adding the ATS gives a sub‑60 mV/decade subthreshold swing, which beats the usual thermionic limit of standard MOSFETs. The work builds a full device‑to‑circuit simulation framework to check both static and dynamic behavior of the proposed complementary inverters. Using TCAD models and SPICE circuit simulations, the team evaluates static power consumption, noise margins, and propagation delays.

The research also looks at how to match the threshold voltages of the MoS₂ and WSe₂ channels with the volatile switching traits of the Ag/SiO₂ ATS. The resulting model can guide the design of energy‑efficient logic gates and low‑power integrated circuits, providing a practical way to reduce standby‑power leakage when operating below 0.5 V.

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