Enhanced Low Power FinFET-Based Flash ADC Design for High-Speed Electronics Applications

Conventional CMOS chips run into big problems when they get smaller than 45 nm. The drive current gets weaker, stacking many devices together becomes hard, and short‑channel effects get much worse. These issues hurt the speed and accuracy of high‑performance analog‑to‑digital converters (ADCs) that are used in noise‑sensitive biomedical devices and mobile communications. To work around these limits, this study looks at a Flash ADC built with 32 nm FinFETs. The goal is to keep power low while still delivering strong drive currents. The design focuses on two parts: a modified double‑tail comparator and an improved encoder block. FinFETs at the 32 nm node give better electrostatic control of the

gate, which reduces short‑channel effects without slowing the circuit down. Although most designs see performance drop sharply below 32 nm, the new double‑tail comparator and encoder together cut power use and boost drive capability. The material also gives M.Tech students practical guidance on how the circuit is built, how to set up simulations, and how to compare different low‑power mixed‑signal FinFET designs.

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