Brightness Scaling of InP-Based Diode Lasers for Communication and Sensing Applications

The project designs, simulates, and tests high‑brightness edge‑emitting tapered diode lasers made from Indium Phosphide (InP) that work at 1550 nm. Conventional solid‑state and fiber lasers have limits in communication and sensing, so this work looks at how to increase the brightness of single‑emitter devices. We model the electro‑optical behavior of the tapered laser to improve both the electrical‑to‑optical conversion efficiency and the beam quality. In continuous‑wave (CW) mode the design delivers 5 W of output power with a 23 % electrical‑to‑optical efficiency. Optical field simulations show the spatial beam profile and give a brightness of 187 MW cm⁻² sr⁻¹, while the slow‑axis linear brightness is 9.1 W mm⁻¹ mrad⁻¹.

By using spatial filtering and optimizing the waveguide, about 87 % of the total optical power ends up in the central lobe of the output beam, which means the beam quality is very good. The study also provides detailed guidance, structure, and simulation tools for building compact, direct‑diode laser sources that can be used in next‑generation optical communication networks and high‑resolution sensing systems.

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