Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices.

Wide‑bandgap (WBG) and ultra‑wide‑bandgap (UWBG) semiconductor devices are changing power electronics. They can block higher voltages, conduct heat better, and lose less energy when switching than traditional silicon parts. This project compares the most promising WBG materials—silicon carbide (SiC) and gallium nitride (GaN)—with the next‑generation UWBG materials—gallium oxide (Ga₂O₃), aluminum nitride (AlN), and diamond. We use detailed simulations in PLECS and MATLAB/Simulink to study how these devices handle heat, switch, and convert power when they operate at high frequency and high temperature. The work builds a systematic method for measuring conduction losses, reverse‑recovery behavior, and thermal‑dissipation limits across different converter topologies. The results give clear guidance on which semiconductor material

is best for high‑power‑density uses such as renewable‑energy grid integration and electric‑vehicle traction inverters. By looking at the physical limits and trade‑offs of each device, the study helps engineers design robust, next‑generation power‑electronic interfaces.

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